Modeling of Tunnel Field Effect Transistor - the impact of construction parameters

被引：0
|
作者：
Wisniewski, Piotr [1 ]
Majkusiak, Bogdan [1 ]
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Koszykowa 75, PL-00662 Warsaw, Poland
来源：
ELECTRON TECHNOLOGY CONFERENCE 2016 | 2016年 / 10175卷
关键词：
semiconductor devices; tunnel transistor; interband tunneling;
D O I：
10.1117/12.2261752
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET's construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.
引用
收藏
页数：9
相关论文
共 50 条
  • [1] Off Current Modeling of a Tunnel Field Effect Transistor
    Islam, Md Shofiqul
    Ahmed, Kawser
    Elahi, Mirza Mohammad Monzure
    2012 7TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE), 2012,
  • [2] Impact of Source Engineering in Split Drain Tunnel Field Effect Transistor
    Bhattacharya, Ayan
    Basak, Debadipta
    Reddy, S.
    Sarkar, Subir Kumar
    PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON), 2018, : 519 - 522
  • [3] Impact of gate leakage considerations in tunnel field effect transistor design
    Chaturvedi, Poornendu
    Kumar, M. Jagadesh
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (07)
  • [4] Junctionless Tunnel Field Effect Transistor
    Ghosh, Bahniman
    Akram, Mohammad Waseem
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (05) : 584 - 586
  • [5] Modeling the threshold voltage of PNIN SSOI tunnel field-effect transistor
    Li, Yuchen
    Liu, Shulin
    Tong, Jun
    Zhang, Yan
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2016, 29 (03) : 458 - 464
  • [6] Analytical Modeling of Sub-onset Current of Tunnel Field Effect Transistor
    Singh, Parmanand
    Asthana, Vivek
    Sithanandam, Radhakrishnan
    Bulusu, Anand
    Das Gupta, Sudeb
    2014 27TH INTERNATIONAL CONFERENCE ON VLSI DESIGN AND 2014 13TH INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS (VLSID 2014), 2014, : 411 - 414
  • [7] Comprehensive investigation of radiofrequency/analog parameters in a ferroelectric tunnel field-effect transistor
    Saha, Rajesh
    Goswami, Rupam
    Bhowmick, Brinda
    Baishya, Srimanta
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (03)
  • [8] Silicene Nanoribbon Tunnel Field Effect Transistor
    Fahad, M. S.
    Srivastava, A.
    Sharma, A. K.
    Mayberry, C.
    Mohsin, K. M.
    SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14, 2016, 75 (05): : 175 - 181
  • [9] Vertical tunnel field-effect transistor
    Bhuwalka, KK
    Sedlmaier, S
    Ludsteck, AK
    Tolksdorf, A
    Schulze, J
    Eisele, I
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (02) : 279 - 282
  • [10] A silicon nanocrystal tunnel field effect transistor
    Harvey-Collard, Patrick
    Drouin, Dominique
    Pioro-Ladriere, Michel
    APPLIED PHYSICS LETTERS, 2014, 104 (19)
12345