Structural and optical properties of crystalline silicon thin films deposited on porous alumina

被引：0
|
作者：
Ktifa, S. [1 ]
Ghrib, M.
Saadallah, F. [1 ]
Yacoubi, N. [1 ]
机构：
[1] Photothermal Lab, Nabeul, Tunisia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11 | 2012年 / 9卷 / 10-11期
关键词：
porous alumina; nanocrystalline silicon; photothermal deflection spectroscopy; BAND-GAP SHRINKAGE;
D O I：
10.1002/pssc.201200044
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The goal of this work is to investigate the influence of the anodization current on the optical properties of porous alumina layer, on which crystalline silicon films are deposited by a PECVD technique. Porous alumina layers were grown by a simple electrochemical anodization method, varying the anodizing voltage between 200 to 400 mV. The structural properties of the Si/Al2O3 films were studied by using Raman spectroscopy and XRD. Photothermal deflection spectroscopy (PDS) is used to determine the gap energy and the optical absorption spectrum by comparing the experimental amplitude of the photothermal signal to the corresponding theoretical one. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2177 / 2179
页数：3
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