Research on the band-gap of InN grown on siticon substrates

被引：0
|
作者：
Xiao, HL [1 ]
Wang, XL [1 ]
Wang, JX [1 ]
Zhang, NH [1 ]
Liu, HX [1 ]
Zeng, YP [1 ]
Li, JM [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期
关键词：
D O I：
10.1002/pssc.200564138
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence (PL) and absorption experiments were carried out to examine the fundamental band-gap of InN films grown on silicon substrates. A strong PL peak at 0.78 eV was observed at room temperature, which is much lower than the commonly accepted value of 1.9 eV. The integrated PL intensity was found to depend linearly on the excitation laser intensity over a wide intensity range. These results strongly suggest that the observed PL is related to the emission of the fundamental inter-band transitions of InN rather than to deep defect or impurity levels. Due to the effect of band-filling with increasing free electron concentration, the absorption edge shifts to higher energy. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：594 / +
页数：2
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