SECOND INDIRECT BAND-GAP IN SILICON

被引：31
|
作者：
FORMAN, RA
THURBER, WR
ASPNES, DE
机构：
[1] NBS,WASHINGTON,DC 20234
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
SOLID STATE COMMUNICATIONS | 1974年 / 14卷 / 10期
关键词：
D O I：
10.1016/0038-1098(74)90413-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1007 / 1010
页数：4
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