Formation of a p-n junction and electrode in silicon con carbide at room temperature using a pulsed laser doping method

被引：0
|
作者：
Eryu, O [1 ]
Nakashima, K [1 ]
机构：
[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO 14, MARCH 1996 | 1996年
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D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
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页码：141 / 146
页数：6
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