Low temperature crystallization of amorphous silicon carbide thin films for p-n junction devices fabrication

被引：3

作者：

Hossain, Maruf ^{[1
]}

Yun, Minseong ^{[1
]}

Korampally, Venumadhav ^{[1
]}

Gangopadhyay, Shubhra ^{[1
]}

机构：

[1] Univ Missouri, Dept Elect & Comp Engn, Columbia, MO 65211 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 8-9期

关键词：

D O I：

10.1007/s10854-007-9452-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal induced crystallization technique was used to crystallize hydrogenated amorphous silicon carbide (a-SiC:H) thin films at low temperatures. Two types of substrates, silicon and silicon carbide were considered and the substrate effects on the final crystallized film were studied. About 200 nm a-SiC:H films were deposited and crystallized successfully on n-type Si and n-type 6H SiC substrates at a temperature of 600 degrees C. Fourier Transform Infrared (FTIR) spectroscopy and transmission electron microscopy (TEM) analysis confirmed the crystallization of a-SiC:H film. Current-voltage (I-V) and capacitance-voltage (C-V) measurement confirms the formation of p-n junction with rectification over five orders of magnitude from -2 V to 2 V.

引用

页码：801 / 804

页数：4

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