Formation of a p-n junction and electrode in silicon con carbide at room temperature using a pulsed laser doping method

被引：0
|
作者：
Eryu, O [1 ]
Nakashima, K [1 ]
机构：
[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO 14, MARCH 1996 | 1996年
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：141 / 146
页数：6
相关论文
共 50 条
  • [31] Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures
    M. V. Belous
    A. M. Genkin
    V. K. Genkina
    Semiconductors, 1999, 33 : 672 - 676
  • [32] Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt
    Zou, Xingli
    Ji, Li
    Yang, Xiao
    Lim, Taeho
    Yu, Edward T.
    Bard, Allen J.
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017, 139 (45) : 16060 - 16063
  • [33] Low resistance cathode metallization and die-bonding in silicon carbide p-n junction diodes
    Kim, Tae-Hong
    Lee, Seung-Yong
    Lee, Jang-Sub
    Suh, Duk-, II
    Cho, Nam-Kyu
    Bahng, Wook
    Kim, Nam-Kyun
    Choi, Sung-Yong
    Kim, Hak-Jong
    Lee, Sang-Kwon
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 717 - +
  • [34] Local electrical stress-induced doping and formation of monolayer graphene P-N junction
    Yu, Tianhua
    Liang, Chen-Wei
    Kim, Changdong
    Yu, Bin
    APPLIED PHYSICS LETTERS, 2011, 98 (24)
  • [35] ELECTRON-EMISSION MICROSCOPE AND VELOCITY DISTRIBUTION STUDIES ON SILICON CARBIDE P-N JUNCTION EMITTERS
    GLEICHAUF, P
    OZAROW, V
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (03) : 549 - &
  • [36] SOME EXPERIMENTS USING A VACUUM-CLEANED SILICON P-N JUNCTION
    LAW, JT
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 848 - &
  • [37] Analysis of a Graphane p-n Junction Using the Green Function Method
    Horri, Ashkan
    Mirmoeini, Seyedeh Zahra
    CHINESE PHYSICS LETTERS, 2014, 31 (08)
  • [38] Pulsed current anodization: An effective method for fabricating patterned porous silicon p-n junction light- emitting diodes
    McGinnis, S
    Sines, P
    Das, B
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (09) : 468 - 471
  • [39] New method of dispersion minimization of Si p-n junction temperature sensors
    Yatsuk, V. O.
    Basalkevych, O. Ye.
    Yatsuk, Yu. V.
    Sachenko, A. O.
    2007 IEEE SENSORS APPLICATIONS SYMPOSIUM, 2007, : 41 - +
  • [40] Shallow p-n junctions formed in silicon using pulsed photon annealing
    Sisianu, ST
    Sisianu, TS
    Railean, SK
    SEMICONDUCTORS, 2002, 36 (05) : 581 - 587
12345