Characterization of sol-gel PZT capacitors with SrRuO3 and Pt electrodes

被引：6

作者：

Cross, JS ^{[1
]}

Fujiki, M ^{[1
]}

Sakai, T ^{[1
]}

Tsukada, M ^{[1
]}

Kamehara, N ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi 24301, Japan

来源：

ELECTROCERAMICS IN JAPAN I | 1999年 / 157-1卷

关键词：

D O I：

10.4028/www.scientific.net/KEM.157-158.181

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pb(Zr,Ti)O-3, [PZT] capacitors were prepared from sol-gel solutions on sputtered Pt and bi-layer SrRuO3,/Pt (SRO) electrodes. The SRO was deposited at room temperature and crystallized by annealing at 600 degrees C. A 300 nm thick PZT capacitor had a higher polarization and lower leakage current with a bi-layer SRO/Pt electrode than with Pt alone. The Pt/PZT/Pt capacitor showed signs of fatigue after 10(4) cycles whereas a Pt/SRO/PZT/SRO/Pt capacitor showed little fatigue even after 10(8) cycles. Because of these and other favorable properties of PZT on the SRO/Pt bi-layer, this structure appears to have applications in a ferroelectric memory.

引用

页码：181 / 187

页数：7

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