Characterization of sol-gel PZT capacitors with SrRuO3 and Pt electrodes

被引：6
|
作者：
Cross, JS [1 ]
Fujiki, M [1 ]
Sakai, T [1 ]
Tsukada, M [1 ]
Kamehara, N [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi 24301, Japan
来源：
ELECTROCERAMICS IN JAPAN I | 1999年 / 157-1卷
关键词：
D O I：
10.4028/www.scientific.net/KEM.157-158.181
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Pb(Zr,Ti)O-3, [PZT] capacitors were prepared from sol-gel solutions on sputtered Pt and bi-layer SrRuO3,/Pt (SRO) electrodes. The SRO was deposited at room temperature and crystallized by annealing at 600 degrees C. A 300 nm thick PZT capacitor had a higher polarization and lower leakage current with a bi-layer SRO/Pt electrode than with Pt alone. The Pt/PZT/Pt capacitor showed signs of fatigue after 10(4) cycles whereas a Pt/SRO/PZT/SRO/Pt capacitor showed little fatigue even after 10(8) cycles. Because of these and other favorable properties of PZT on the SRO/Pt bi-layer, this structure appears to have applications in a ferroelectric memory.
引用
收藏
页码：181 / 187
页数：7
相关论文
共 50 条
  • [31] Evaluation of (Pb, La)(Zr, Ti)O3 (PLZT) capacitors of different film thicknesses with Pt/SrRuO3 top electrodes
    Cross, JS
    Fujiki, M
    Tsukada, M
    Matsuura, K
    Otani, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (4B): : L448 - L450
  • [32] Sol-gel PZT for MEMS applications
    Piekarski, B
    Dubey, M
    Zakar, E
    Polcawich, R
    DeVoe, D
    Wickenden, D
    INTEGRATED FERROELECTRICS, 2002, 42 : 25 - 37
  • [33] Dry etching of sol-gel PZT
    Zeto, R
    Rod, B
    Dubey, M
    Ervin, M
    Conrad, J
    Piekarz, R
    Trolier-McKinstry, S
    Su, T
    Shepard, J
    MATERIALS SCIENCE OF MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES, 1999, 546 : 159 - 164
  • [34] Conducting strontium ruthenium oxide interface layers for application to PZT/SrRuO3/metal thin film capacitors
    Seveno, R
    Braud, A
    Gundel, HW
    FERROELECTRICS, 2003, 293 : 127 - 134
  • [35] Nanostructured PZT/PT multilayered thin films prepared by sol-gel process
    Laishram, Radhapiyari
    Thakur, O. P.
    MATERIALS LETTERS, 2014, 137 : 49 - 51
  • [36] Switching properties of Pb(Nb, Zr, Ti)O3 capacitors using SrRuO3 electrodes
    Aggarwal, S
    Jenkins, IG
    Nagaraj, B
    Kerr, CJ
    Canedy, C
    Ramesh, R
    Velasquez, G
    Boyer, L
    Evans, JT
    APPLIED PHYSICS LETTERS, 1999, 75 (12) : 1787 - 1789
  • [37] Precursor-monomer method of sol-gel for fabrication PT/PZT/PT ferroelectric films
    Chen, Z
    Zhang, SR
    Yang, CT
    Zeng, HZ
    Sun, MX
    Li, B
    INTEGRATED FERROELECTRICS, 2005, 75 : 199 - 208
  • [38] Microstructure of PZT sol-gel films on Pt substrates with different adhesion layers
    Klissurska, RD
    Maeder, T
    Brooks, KG
    Setter, N
    MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 297 - 300
  • [39] Electrical properties of all-perovskite oxide (SrRuO3/BaxSr1-xTiO3/SrRuO3) capacitors
    Izuha, M
    Abe, K
    Fukushima, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B): : 5866 - 5869
  • [40] Studies of a PT/PZT/PT sandwich structure for feram applications using sol-gel processing
    Ren, TL
    Zhang, LT
    Liu, LT
    Li, ZJ
    INTEGRATED FERROELECTRICS, 2001, 39 (1-4) : 1165 - 1172
12345