A 0.02 nJ Self-calibrated 65nm CMOS Delay Line Temperature Sensor

被引:0
|
作者
Xie, Shuang [1 ]
Ng, Wai Tung [1 ]
机构
[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an area and power efficient delay line based temperature sensor for on-chip monitoring. This sensor can be deployed in large numbers on a microprocessor chip to facilitate advanced thermal and power management techniques. The proposed self-calibration design eliminates the effort associated with two-point calibration commonly found in conventional temperature sensors. In addition, it saves digital decoding power by the use of both tab and counter decoding. Measurement results for a 65nm CMOS design show that the proposed temperature sensor consumes 0.02 nJ energy per conversion. It occupies an active area of 0.002 mm(2) and has a resolution of 0.5 degrees C with errors within +/- 2.0 degrees C over a temperature range from 20 to 80 degrees C.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] Temperature self-adaptive program algorithm on 65nm MLC NOR flash memory
    史维华
    洪志良
    胡潮红
    亢勇
    半导体学报, 2009, (08) : 160 - 163
  • [42] A Self-Healing Technique Using ZTC Biasing for PVT Variations Compensation in 65nm CMOS Technology
    Nateghi, Hamidreza
    El-Sankary, Kamal
    2015 IEEE 28TH CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (CCECE), 2015, : 128 - 131
  • [43] A Low Energy-Noise 65nm CMOS Switched-Capacitor Resistive-Bridge Sensor Interface
    Koay, K. C.
    Chan, P. K.
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2017, 64 (04) : 799 - 810
  • [44] Self-Calibrated, Sensitive, and Flexible Temperature Sensor Based on 3D Chemically Modified Graphene Hydrogel
    Wu, Jin
    Huang, Wenxi
    Liang, Yuning
    Wu, Zixuan
    Zhong, Bizhang
    Zhou, Zijing
    Ye, Jindong
    Tao, Kai
    Zhou, Yubin
    Xie, Xi
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (04)
  • [45] A PVT tolerant 0.18MHz to 600MHz self-calibrated digital PLL in 90nm CMOS process
    Lin, JHC
    Haroun, B
    Foo, T
    Wang, JS
    Helmick, B
    Randall, S
    Mayhugh, T
    Barr, C
    Kirkpatrick, J
    2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 : 488 - 489
  • [46] Comparison of Bi-stable and Delay-based Physical Unclonable Functions from Measurements in 65nm bulk CMOS
    Bhargava, Mudit
    Cakir, Cagla
    Mai, Ken
    2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2012,
  • [47] STACKED-CASCODE CLASS-E POWER AMPLIFIER WITH DELAY-CONTROLLED AUXILIARY BRANCHES IN 65nm CMOS
    Yang, Fan
    Liao, Yu
    Xia, Tao
    Wang, Runhua
    Huang, Ru
    Liao, Huailin
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [48] A Power and Area Efficient 65 nm CMOS Delay Line ADC for On-chip Voltage Sensing
    Shen, Sida Amy
    Xie, Shuang
    Ng, Wai Tung
    2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC), 2012,
  • [49] A CMOS Smart Temperature Sensor with One Homogeneous Delay Line and Curvature Compensation
    Chen, Chun-Chi
    Guo, Zong-Yi
    PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016, 2016, 168 : 1755 - 1758
  • [50] A novel low cost 65nm CMOS process architecture with self aligned isolation and W cladded source/drain
    Blosse, A
    Rarnkumar, K
    Gopalan, P
    Hsu, CT
    Narayanan, S
    Narasimhan, G
    Gettle, R
    Kapre, R
    Sharifzadeh, S
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 669 - 672