OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS

被引:6
|
作者
Weng, Guo-En [1 ,2 ,3 ]
Zhang, Bao-Ping [1 ,2 ,3 ]
Liang, Ming-Ming [1 ,2 ,3 ]
Lv, Xue-Qin [3 ]
Zhang, Jiang-Yong [1 ,2 ]
Ying, Lei-Ying [1 ,2 ]
Qiu, Zhi Ren [4 ]
Yaguchi, H. [5 ]
Kuboya, S. [6 ]
Onabe, K. [6 ]
Chen, Shao-Qiang [7 ]
Akiyama, H. [7 ]
机构
[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Pen Tung Sah Inst Micro Nano Sci & Technol, Xiamen 361005, Peoples R China
[4] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[5] Saitama Univ, Grad Sch Sci & Engn, Div Math Elect & Informat, Saitama 3388570, Japan
[6] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan
[7] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
基金
中国国家自然科学基金;
关键词
InGaN; asymmetric coupled quantum wells; carrier dynamics; transition energy; DEFECTS; GAN;
D O I
10.1142/S1793604713500215
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy levels in the ACQW structure are clearly revealed by PR measurements and are in good agreement with calculations. Our results indicate that the enhanced emission from the mid well is ascribed to "reverse tunneling" from 3.0 to 2.5 nm well, which is confirmed by TRPL experiments.
引用
收藏
页数:5
相关论文
共 50 条
  • [31] Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
    Li, X.
    Zhao, D. G.
    Yang, J.
    Jiang, D. S.
    Liu, Z. S.
    Chen, P.
    Zhu, J. J.
    Liu, W.
    He, X. G.
    Li, X. J.
    Liang, F.
    Zhang, L. Q.
    Liu, J. P.
    Yang, H.
    Zhang, Y. T.
    Du, G. T.
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 97 : 186 - 192
  • [32] Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs
    Kim, DJ
    Moon, YT
    Song, KM
    Choi, CJ
    Ok, YW
    Seong, TY
    Park, SJ
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 : 368 - 372
  • [33] On the optical polarization properties of semipolar InGaN quantum wells
    Schade, L.
    Schwarz, U. T.
    Wernicke, T.
    Rass, J.
    Ploch, S.
    Weyers, M.
    Kneissl, M.
    APPLIED PHYSICS LETTERS, 2011, 99 (05)
  • [34] Optical properties in wurtzite InGaN staggered quantum wells
    Geng, Zhenduo
    Wang, Yuping
    MODERN PHYSICS LETTERS B, 2015, 29 (15):
  • [35] Reconfigurable optical properties in InGaN/GaN quantum wells
    Shmagin, IK
    Muth, JF
    Kolbas, RM
    Mack, MP
    Abare, AC
    Keller, S
    Coldren, LA
    Mishra, UK
    DenBaars, SP
    APPLIED PHYSICS LETTERS, 1997, 71 (11) : 1455 - 1457
  • [37] Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
    Badcock, T.J.
    Dawson, P.
    Davies, M.J.
    Kappers, M.J.
    Massabuau, F.C.-P.
    Oehler, F.
    Oliver, R.A.
    Humphreys, C.J.
    Journal of Applied Physics, 2014, 115 (11)
  • [38] Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells
    Kopylov, O.
    Shirazi, R.
    Svensk, O.
    Suihkonen, S.
    Sintonen, S.
    Sopanen, M.
    Kardynal, B. E.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 727 - 729
  • [39] Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
    Ozgür, U
    Everitt, HO
    Keller, S
    DenBaars, SP
    APPLIED PHYSICS LETTERS, 2003, 82 (09) : 1416 - 1418
  • [40] On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells
    Schade, L.
    Wernicke, T.
    Rass, J.
    Ploch, S.
    Weyers, M.
    Kneissl, M.
    Schwarz, U. T.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (01): : 145 - 157