Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

被引：14
|
作者：
Badcock, T.J. [1 ,3 ]
Dawson, P. [1 ]
Davies, M.J. [1 ]
Kappers, M.J. [2 ]
Massabuau, F.C.-P. [2 ]
Oehler, F. [2 ]
Oliver, R.A. [2 ]
Humphreys, C.J. [2 ]
机构：
[1] School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom
[2] Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
[3] Toshiba Research Europe Ltd, 208 Cambridge Science Park, Cambridge CB4 0GZ, United Kingdom
来源：
Journal of Applied Physics | 2014年 / 115卷 / 11期
关键词：
28;
D O I：
10.1063/1.4868628
中图分类号：
学科分类号：
摘要：
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