Influence of ambient dielectric properties on the luminescence in quantum wires of porous silicon

被引：0
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作者：
Kashkarov, PK
Konstantinova, EA
Pavlikov, AV
Timoshenko, VY
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PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 1997年 / 1-2卷
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O59 [应用物理学];
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摘要：
The photoluminescence spectra of porous silicon with pores filled by benzol, acetone, ethanol and methanol molecules have been investigated. The photoluminescence quenching caused by adsorption is found to increase for ambients with higher dielectric constants. The discussion of the results is based on the model of radiative recombination of excitons in silicon nanostructures.
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页码：123 / 129
页数：7
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