From undulating Si quantum wires to Si quantum dots: a model for porous silicon

被引：0
|
作者：
Degoli, Elena [1 ]
Luppi, Marcello [1 ]
Ossicini, Stefano [1 ]
机构：
[1] Ist. Naz. per la Fis. della Materia, Dipartimento di Fisica, Univ. di Modena e Reggio Emilia, Via Campi 213/A, I-41100 Modena, Italy
来源：
Physica Status Solidi (A) Applied Research | 2000年 / 182卷 / 01期
关键词：
Computer simulation - Electronic density of states - Energy gap - Morphology - Optical properties - Quantum theory - Semiconductor quantum dots - Semiconductor quantum wires;
D O I：
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学科分类号：
摘要：
Freshly etched porous silicon shows the structure of a crystalline silicon skeleton with a connected undulating-wire morphology; in aged porous silicon samples the presence of Si dots is predominant. In this paper we present, for the first time, ab-initio results of the electronic and optical properties of undulating Si quantum wires moreovers, the transition from Si quantum wires to Si quantum dots is also discussed.
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页码：301 / 306
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