共 50 条
- [32] Reliable operation of 976nm High Power DFB Broad Area Diode Lasers with over 60% Power Conversion Efficiency NOVEL IN-PLANE SEMICONDUCTOR LASERS X, 2011, 7953
- [33] 40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes IEEE Journal on Selected Topics in Quantum Electronics, 5 (03): : 729 - 734
- [39] Ultimate high power operation of 9xx-nm single emitter broad stripe laser diodes HIGH-POWER DIODE LASER TECHNOLOGY XV, 2017, 10086