HIGH OUTPUT POWER AND HIGH-TEMPERATURE OPERATION OF 1.5 MU-M DFB-PPIBH LASER-DIODES

被引：7
|
作者：
KAKIMOTO, S
NAKAJIMA, Y
TAKEMOTO, A
YOSHIDA, N
NAMIZAKI, H
SUSAKI, W
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期
关键词：
D O I：
10.1109/3.29259
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1288 / 1293
页数：6
相关论文
共 50 条
  • [1] HIGHLY EFFICIENT 1.5 MU-M DFB-PPIBH LASER DIODE WITH VERY NARROW BEAM
    KAKIMOTO, S
    YOSHIDA, N
    TAKEMOTO, A
    KAWAMA, Y
    NAKAJIMA, Y
    SAKAKIBARA, Y
    ELECTRONICS LETTERS, 1988, 24 (24) : 1500 - 1501
  • [2] SPECTRAL PROPERTIES OF STRONGLY COUPLED 1.5 MU-M DFB LASER-DIODES
    WESTBROOK, LD
    HENNING, ID
    NELSON, AW
    FIDDYMENT, PJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) : 512 - 518
  • [3] ALGAINAS/INP 1.5 MU-M MQW DFB LASER-DIODES EXCEEDING 20 GHZ BANDWIDTH
    STEINHAGEN, F
    HILLMER, H
    LOSCH, R
    SCHLAPP, W
    WALTER, H
    GOBEL, R
    KUPHAL, E
    HARTNAGEL, HL
    BURKHARD, H
    ELECTRONICS LETTERS, 1995, 31 (04) : 274 - 275
  • [4] HIGH-SPEED CHARACTERISTICS OF MODIFIED DFB-PPIBH LASER DIODE
    KAKIMOTO, S
    WATANABE, H
    FUJIWARA, M
    OHKURA, Y
    NAKAJIMA, Y
    SAKAKIBARA, Y
    ELECTRONICS LETTERS, 1989, 25 (07) : 483 - 484
  • [5] HIGH-POWER SINGLE-MODE 2.0 MU-M LASER-DIODES
    MAJOR, JS
    NAM, DW
    OSINSKI, JS
    WELCH, DF
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (07) : 733 - 734
  • [6] 1.48 MU-M HIGH-POWER MULTIPLE-QUANTUM-WELL LASER-DIODES
    SASAKI, Y
    TAKANO, S
    HASUMI, H
    NAKANO, H
    UEHARA, K
    KOSUGE, K
    KITAMURA, M
    NEC RESEARCH & DEVELOPMENT, 1992, 33 (03): : 365 - 371
  • [7] SUFFICIENTLY SIDE-MODE-SUPPRESSED HIGH-OUTPUT-POWER 1.5 MU-M DFB LASERS
    YOSHIDA, J
    ITAYA, Y
    NOGUCHI, Y
    MATSUOKA, T
    NAKANO, Y
    ELECTRONICS LETTERS, 1986, 22 (06) : 327 - 328
  • [8] STABILIZATION OF THE EMISSION FREQUENCY OF 1.54 MU-M DFB LASER-DIODES TO HYDROGEN IODIDE
    BERTINETTO, F
    GAMBINI, P
    LANO, R
    PULEO, M
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (04) : 472 - 474
  • [9] HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M
    HSIEH, JJ
    APPLIED PHYSICS LETTERS, 1980, 37 (01) : 25 - 27
  • [10] IMPROVED HIGH-TEMPERATURE PERFORMANCE OF 1.52 MU-M INGAASP LASER-DIODES FABRICATED BY 2-STEP VPE AND LPE
    KATO, Y
    YANASE, T
    KITAMURA, M
    NISHI, K
    YAMAGUCHI, M
    NISHIMOTO, H
    MITO, I
    LANG, R
    ELECTRONICS LETTERS, 1985, 21 (07) : 293 - 295
12345