HIGH OUTPUT POWER AND HIGH-TEMPERATURE OPERATION OF 1.5 MU-M DFB-PPIBH LASER-DIODES

被引:7
|
作者
KAKIMOTO, S
NAKAJIMA, Y
TAKEMOTO, A
YOSHIDA, N
NAMIZAKI, H
SUSAKI, W
机构
关键词
D O I
10.1109/3.29259
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1288 / 1293
页数:6
相关论文
共 50 条
  • [41] HIGH-POWER, HIGH-TEMPERATURE OPERATION OF GAINASSB-ALGAASSB RIDGE-WAVE-GUIDE LASERS EMITTING AT 1.9 MU-M
    CHOI, HK
    TURNER, GW
    CONNORS, MK
    FOX, S
    DAUGA, C
    DAGENAIS, M
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (03) : 281 - 283
  • [42] HIGH QUANTUM EFFICIENCY, HIGH-POWER, MODULATION DOPED GAINAS STRAINED-LAYER QUANTUM WELL LASER-DIODES EMITTING AT 1.5-MU-M
    THIJS, PJA
    VANDONGEN, T
    ELECTRONICS LETTERS, 1989, 25 (25) : 1735 - 1737
  • [43] ACCURATE ANALYSIS OF DC ELECTRICAL CHARACTERISTICS OF 1.3 MU-M DCPBH LASER-DIODES
    VERSLEIJEN, MPJG
    KUINDERSMA, PI
    KHOE, GDD
    MEULEMAN, LJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 925 - 935
  • [44] FREQUENCY STABILIZATION OF LASER-DIODES AT 0.83 MU-M USING A FIBER OPTIC COUPLER
    CHIEN, PY
    PAN, CL
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (05) : 328 - 330
  • [45] HIGH-POWER OPERATION OF 830-NM ALGAAS LASER-DIODES
    SHINOZAKI, K
    WATANABE, A
    FURUKAWA, R
    WATANABE, N
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) : 2907 - 2911
  • [46] HIGH-POWER CONTINUOUS OPERATION OF LASER-DIODES AT 1064NM
    MURISON, RF
    MOORE, AH
    LEE, SR
    HOLEHOUSE, N
    DZURKO, KM
    COCKERILL, TM
    COLEMAN, JJ
    ELECTRONICS LETTERS, 1991, 27 (21) : 1979 - 1981
  • [47] HIGH-POWER ULTRAFAST LASER-DIODES
    DELFYETT, PJ
    FLOREZ, LT
    STOFFEL, N
    GMITTER, T
    ANDREADAKIS, NC
    SILBERBERG, Y
    HERITAGE, JP
    ALPHONSE, GA
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) : 2203 - 2219
  • [48] BROAD-BAND 1.5 MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIER WITH HIGH-SATURATION OUTPUT POWER
    SAITOH, T
    MUKAI, T
    ELECTRONICS LETTERS, 1987, 23 (05) : 218 - 219
  • [49] EXTREMELY LOW THRESHOLD CURRENT OPERATION IN 1.5-MU-M MQW-DFB LASER-DIODES WITH SEMI-INSULATING INP CURRENT BLOCKING REGION
    SASAKI, T
    YAMAZAKI, H
    HENMI, N
    YAMADA, H
    YAMAGUCHI, M
    KITAMURA, M
    MITO, I
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1990, 8 (09) : 1343 - 1349
  • [50] HIGH-POWER INGAASP/GAAS 0.8-MU-M LASER-DIODES AND PECULIARITIES OF OPERATIONAL CHARACTERISTICS
    DIAZ, J
    ELIASHEVICH, I
    HE, X
    YI, H
    WANG, L
    KOLEV, E
    GARBUZOV, D
    RAZEGHI, M
    APPLIED PHYSICS LETTERS, 1994, 65 (08) : 1004 - 1005