Dual-gate SOI MOSFETs: Physics and potential

被引：0
|
作者：
Colinge, JP
机构：
来源：
PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1996年 / 96卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Dual-gate SOI MOSFETs offer the ultimate benefits of fully depleted SOI devices. Body-effect and short-channel effects are minimized, provided the silicon film thickness ii; scaled down appropriately as a function of gate length. Volume inversion offers superior transconductance when the device operates near threshold. Excellent behavior of dual-gate transistors is obtained in hostile environments such as high temperature and radiations (total dose and SEU). Finally, thin-film dual-gate transistors operating at low temperature present quantum effects due to two-dimensional carrier confinement.
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页码：271 / 286
页数：16
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