Dual-gate SOI MOSFETs: Physics and potential

Dual-gate SOI MOSFETs offer the ultimate benefits of fully depleted SOI devices. Body-effect and short-channel effects are minimized, provided the silicon film thickness ii; scaled down appropriately as a function of gate length. Volume inversion offers superior transconductance when the device operates near threshold. Excellent behavior of dual-gate transistors is obtained in hostile environments such as high temperature and radiations (total dose and SEU). Finally, thin-film dual-gate transistors operating at low temperature present quantum effects due to two-dimensional carrier confinement.