A COMPARATIVE STUDY ON ANALOG/RF PERFORMANCE OF ULTRA-THIN BODY (UTB) SOI AND DOUBLE GATE MOSFETs

In this paper, a comprehensive comparison of analog/RF performance of ultra-thin-body (UTB) SOI and double-gate (DG) devices was investigated through simulation. Analog/RF figures of merit, which was being estimated including intrinsic gain, g(m)/g(ds), g(m)/I-ds, values, transition/cut-off frequency,f(T), maximum oscillation frequency, f(MAX), and minimum noise figure, NFmin. Due to the unique structure of double-gate (DG) devices, it can exhibit excellent analog/RF behaviors. Higher g(m)/I-ds ratio and intrinsic gain, g(m)/g(ds) can be received by comparing with the ultra-thin-body (UTB) SOI. Superior fT and f(MAX), which are due to higher transconductance, g, and lower output conductance, g(m)/g(ds) can be observed in the double-gate devices. In addition, better noise and gains performance can be achieved resulting from improved g.. Thus, the double-gate devices can be considered as better candidates for analog/RF applications.