1/f noise characterization of piezoresistive nano-gauges for MEMS sensors

被引：0

作者：

Nowodzinski, Antoine ^{[1
]}

Ahmed, Dihia Sidi ^{[1
]}

Theodorou, Christoforos ^{[2
]}

Koumela, Alexandra ^{[1
]}

Duchemin, Helene ^{[1
]}

Dressler, Cyril ^{[1
]}

Berthelot, Audrey ^{[1
]}

Lhermet, Helene ^{[1
]}

机构：

[1] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[2] IMEP LAHC, Grenoble INP MINATEC, 3 Parvis Louis Neel,CS 50257, F-38016 Grenoble 1, France

来源：

2018 IEEE SENSORS | 2018年

关键词：

flicker noise; 1/f noise; MEMS sensors; NEMS gauge; nano-gauges' noise; LOW-FREQUENCY NOISE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the study carried out in order to characterize the influence of the main fabrication steps of the silicon nano-gauge on their 1/f noise. Geometry of the nano-gauge, doping level, thinning process of gauges, doping before or after gauges patterning, release process and treatments for trap curing have been studied. Gauges release has a great impact on the 1/f noise: it increases the noise by a factor of up to 100 for the smallest gauges. N2H2 annealing and O-2 plasma treatment reduce the noise generated by the release of the gauge. We assume that the origin behind the noise increase is the trapping-detrapping of carriers in surface traps of the nano-gauge.

引用

页码：1284 / 1287

页数：4

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