1/f noise characterization of piezoresistive nano-gauges for MEMS sensors

被引：0
|
作者：
Nowodzinski, Antoine [1 ]
Ahmed, Dihia Sidi [1 ]
Theodorou, Christoforos [2 ]
Koumela, Alexandra [1 ]
Duchemin, Helene [1 ]
Dressler, Cyril [1 ]
Berthelot, Audrey [1 ]
Lhermet, Helene [1 ]
机构：
[1] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
[2] IMEP LAHC, Grenoble INP MINATEC, 3 Parvis Louis Neel,CS 50257, F-38016 Grenoble 1, France
来源：
2018 IEEE SENSORS | 2018年
关键词：
flicker noise; 1/f noise; MEMS sensors; NEMS gauge; nano-gauges' noise; LOW-FREQUENCY NOISE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the study carried out in order to characterize the influence of the main fabrication steps of the silicon nano-gauge on their 1/f noise. Geometry of the nano-gauge, doping level, thinning process of gauges, doping before or after gauges patterning, release process and treatments for trap curing have been studied. Gauges release has a great impact on the 1/f noise: it increases the noise by a factor of up to 100 for the smallest gauges. N2H2 annealing and O-2 plasma treatment reduce the noise generated by the release of the gauge. We assume that the origin behind the noise increase is the trapping-detrapping of carriers in surface traps of the nano-gauge.
引用
收藏
页码：1284 / 1287
页数：4
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