HIGH POWER ULTRA-VIOLET EMITTING DIODES

被引：0
|
作者：
Galchina, Nina A. [1 ]
Kogan, Lev M. [1 ]
Kolesnikov, Alexander A.
Portnyagin, Yuri A.
Rassokhin, Igor T.
机构：
[1] OPTEL Res & Prod Ctr Open Co, Moscow, Russia
来源：
LIGHT & ENGINEERING | 2011年 / 19卷 / 02期
关键词：
ultra-violet emitting diode; spectrum; flux; intensity; external quantum efficiency; emitting angle; wavelength;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The article informs of the first domestic (Russian) development of high power ultra-violet emitting diodes (UVD) with emitting angle (2 Theta(0.5)) from 5 to 40 degrees, peak wave length of 360-370, 380-385 and 395-405 nm and flux of 45-60, 90-105 and 240-270 mW accordingly. UVD maximum intensity with 2 Theta(0.5)= 5 degrees reaches 2.7-3.3 W/sr.
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页码：77 / 80
页数：4
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