HIGH POWER ULTRA-VIOLET EMITTING DIODES

被引：0

作者：

Galchina, Nina A. ^{[1
]}

Kogan, Lev M. ^{[1
]}

Kolesnikov, Alexander A.

Portnyagin, Yuri A.

Rassokhin, Igor T.

机构：

[1] OPTEL Res & Prod Ctr Open Co, Moscow, Russia

来源：

LIGHT & ENGINEERING | 2011年 / 19卷 / 02期

关键词：

ultra-violet emitting diode; spectrum; flux; intensity; external quantum efficiency; emitting angle; wavelength;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The article informs of the first domestic (Russian) development of high power ultra-violet emitting diodes (UVD) with emitting angle (2 Theta(0.5)) from 5 to 40 degrees, peak wave length of 360-370, 380-385 and 395-405 nm and flux of 45-60, 90-105 and 240-270 mW accordingly. UVD maximum intensity with 2 Theta(0.5)= 5 degrees reaches 2.7-3.3 W/sr.

引用

页码：77 / 80

页数：4

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