Performance and Properties of Ultra-Thin Silicon Nitride X-ray Windows

被引：13

作者：

Torma, Pekka T. ^{[1
]}

Kostamo, Jari ^{[1
]}

Sipila, Heikki ^{[1
]}

Mattila, Marco ^{[1
,2
]}

Kostamo, Pasi ^{[1
]}

Kostamo, Esa ^{[1
]}

Lipsanen, Harri ^{[2
]}

Laubis, Christian ^{[3
]}

Scholze, Frank ^{[3
]}

Nelms, Nick ^{[4
]}

Shortt, Brian ^{[4
]}

Bavdaz, Marcos ^{[4
]}

机构：

[1] HS Foils Oy, Espoo 02150, Finland

[2] Aalto Univ, Dept Micro & Nanosci, Micronova, Aalto 00076, Finland

[3] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

[4] ESA ESTEC, NL-2200 AG Noordwijk, Netherlands

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 01期

关键词：

Optical films; space technology; X-ray applications; X-ray detectors; X-ray filters; X-ray windows; CHEMICAL-VAPOR-DEPOSITION; SYNCHROTRON-RADIATION; HIGH-RESOLUTION; EUV METROLOGY; DIAMOND; PTB; ABSORPTION; DETECTORS; OPTICS; FILMS;

D O I：

10.1109/TNS.2014.2298434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spectral transmittance of a new generation of SiN based X-ray windows is characterized. The windows are strengthened by low aspect-ratio support grid. As expected for this unprecedented thin window material, the transmittance in the soft X-ray spectral region outperforms the present technologies. A detailed study of the various performance properties of the fabricated SiN X-ray windows is presented. Besides their high transmittance, the windows also have high uniformity, high mechanical strength and good leak tightness. The windows can withstand temperatures from cryogenic range to approximately 250 degrees C. SiN foils are the first real nanotechnology-based choice for the practical realization of X-ray windows and bring the performance to a level that only nanotechnology can offer.

引用

页码：695 / 699

页数：5

共 50 条

[41] Evaluation of joined silicon nitride by X-ray computed tomography (X-ray CT)
Kondo, Naoki
Nishimura, Yoshihiro
Suzuki, Takayuki
Kita, Hideki
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2010, 118 (1384) : 1192 - 1194
[42] Chemical and Ionic Conductivity Degradation of Ultra-Thin Ionomer Film by X-ray Beam Exposure
Paul, Devproshad K.
Giorgi, Javier B.
Karan, Kunal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2013, 160 (04) : F464 - F469
[43] Determining surface coverage of ultra-thin gold films from X-ray reflectivity measurements
Kossoy, A.
Simakov, D.
Olafsson, S.
Leosson, K.
THIN SOLID FILMS, 2013, 536 : 50 - 53
[44] Study of the Interface Structure of Epitaxial Ultra-Thin Film by an X-Ray Holographic Imaging Method
Takahashi, Toshio
Shirasawa, Tetsuroh
Sekiguchi, Kouji
Voegeli, Wolfgang
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2009, 7 : 525 - 528
[45] Application of x-ray fluorescence spectrometry in characterization of high-k ultra-thin films
Zhao, C
Brijs, B
Dortu, F
DeGendt, S
Caymax, M
Heyns, M
Besling, W
Maes, JW
ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES, 2003, 2003 (03): : 243 - 251
[46] Recent advances in characterization of ultra-thin films using specular X-ray reflectivity technique
Banerjee, S
Ferrari, S
Chateigner, D
Gibaud, A
THIN SOLID FILMS, 2004, 450 (01) : 23 - 28
[47] ELECTROLUMINESCENCE, PHOTOLUMINESCENCE AND X-RAY REFLECTIVITY STUDIES OF SELF-ASSEMBLED ULTRA-THIN FILMS
HONG, HP
DAVIDOV, D
AVNY, Y
CHAYET, H
FARAGGI, EZ
NEUMANN, R
ADVANCED MATERIALS, 1995, 7 (10) : 846 - &
[48] HIGH RESOLUTION X-RAY MICRO-CT OF ULTRA-THIN WALL SPACE COMPONENTS
Roth, D. J.
Rauser, R. W.
Bowman, R. R.
Bonacuse, P. J.
Martin, R. E.
Locci, I. E.
Kelley, M.
REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION, VOLS 32A AND 32B, 2013, 1511 : 595 - 603
[49] Microscopic observation of X-ray irradiation damage in ultra-thin SiO2 films
Ohmori, K
Goto, T
Ikeda, H
Sakai, A
Zaima, S
Yasuda, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B): : 2823 - 2826
[50] Fabrication and characterization of mechanical properties of ultra-thin silicon microcantilevers
Zantye, PB
Sikder, AK
Sharma, RK
Kumar, A
SURFACE ENGINEERING: SCIENCE AND TECHNOLOGY II, 2002, : 261 - 272

← 1 2 3 4 5 →