Long electron spin coherence in ion-implanted GaN: The role of localization

被引：13
|
作者：
Buss, J. H. [1 ]
Rudolph, J. [1 ]
Shvarkov, S. [2 ]
Hardtdegen, H. [3 ]
Wieck, A. D. [2 ]
Haegele, D. [1 ]
机构：
[1] Ruhr Univ Bochum, Arbeitsgrp Spektroskopie Kondensierten Mat, D-44780 Bochum, Germany
[2] Ruhr Univ Bochum, D-44780 Bochum, Germany
[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期
关键词：
Gallium nitride;
D O I：
10.1063/1.4804558
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is studied by time-resolved Kerr-rotation spectroscopy. The spin relaxation time increases strongly by up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition from delocalized to localized electrons. We find a characteristic change in the magnetic field dependence of spin relaxation that can be used as a sensitive probe for the degree of localization. (C) 2013 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Properties of various ion-implanted sapphire substrates for GaN epilayers
    Jhin, J
    Lee, J
    Byun, D
    Lee, JS
    Lee, JH
    Kim, C
    Lee, H
    Moon, Y
    Koh, E
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12): : 2791 - 2794
  • [42] Ion-implanted amorphous silicon studied by variable coherence TEM
    Cheng, JY
    Gibson, JM
    Voyles, PM
    Treacy, MMJ
    Jacobson, DC
    ADVANCES IN MATERIALS PROBLEM SOLVING WITH THE ELECTRON MICROSCOPE, 2001, 589 : 247 - 252
  • [43] Optical characteristics of Mn+ -ion-implanted GaN epilayers
    Shon, Y
    Kwon, YH
    Kang, TW
    Fan, X
    Fu, D
    Kim, Y
    JOURNAL OF CRYSTAL GROWTH, 2002, 245 (3-4) : 193 - 197
  • [44] Ion-implanted edge termination for GaN Schottky diode rectifiers
    Mohammad, SN
    Eddy, CR
    Kub, F
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (01): : 178 - 184
  • [45] Electron spin resonance studies on defects in phosphorus ion-implanted C60 films
    Fahim, NF
    Kojma, N
    Yamaguchi, M
    Ohshita, Y
    Eid, AE
    Dharmarasu, N
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 75 (3-4) : 411 - 420
  • [46] WEAK-LOCALIZATION, ELECTRON-ELECTRON INTERACTION, AND METAL-INSULATOR-TRANSITION IN ION-IMPLANTED POLYMERS
    WANG, ZH
    DU, G
    JOO, J
    BURNS, A
    JASTY, S
    ZHOU, P
    EPSTEIN, AJ
    OSAHENI, JA
    JENEKHE, SA
    WANG, CS
    SYNTHETIC METALS, 1993, 57 (2-3) : 4829 - 4835
  • [47] RESISTANCE CHANGES INDUCED BY ELECTRON SPIN RESONANCE IN ION-IMPLANTED Si:P SYSTEM.
    Murakami, Kouichi
    Namba, Susumu
    Kishimoto, Naoki
    Masuda, Kohzoh
    Gamo, Kenji
    Scientific Papers of the Institute of Physical and Chemical Research (Japan), 1977, 71 (04): : 103 - 110
  • [48] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED AL
    WAMPLER, WR
    FOLLSTAEDT, DM
    PICRAUX, ST
    APPLIED PHYSICS LETTERS, 1980, 36 (05) : 366 - 368
  • [49] ELECTRON-SPIN RESONANCE STUDIES ON ION-IMPLANTED SILICON .2. CONDUCTION ELECTRONS
    HASEGAWA, S
    KARIMOTO, H
    SHIMIZU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1190 - 1197
  • [50] AN ELECTRON-GUN FOR ANNEALING OF ION-IMPLANTED MATERIALS
    LULLI, G
    MERLI, PG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C233 - C233
12345