Long electron spin coherence in ion-implanted GaN: The role of localization

被引：13
|
作者：
Buss, J. H. [1 ]
Rudolph, J. [1 ]
Shvarkov, S. [2 ]
Hardtdegen, H. [3 ]
Wieck, A. D. [2 ]
Haegele, D. [1 ]
机构：
[1] Ruhr Univ Bochum, Arbeitsgrp Spektroskopie Kondensierten Mat, D-44780 Bochum, Germany
[2] Ruhr Univ Bochum, D-44780 Bochum, Germany
[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期
关键词：
Gallium nitride;
D O I：
10.1063/1.4804558
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is studied by time-resolved Kerr-rotation spectroscopy. The spin relaxation time increases strongly by up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition from delocalized to localized electrons. We find a characteristic change in the magnetic field dependence of spin relaxation that can be used as a sensitive probe for the degree of localization. (C) 2013 AIP Publishing LLC.
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页数：4
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