Analog/RF Performance of Thin (∼10 nm) HfO2 Ferroelectric FDSOI NCFET at 20 nm Gate Length

被引：0

作者：

Mehrotra, Shruti ^{[1
]}

Qureshi, Shafi ^{[1
]}

机构：

[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

来源：

2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年

关键词：

Analog/RF; HfO2; ferroelectric; Negative capacitance; PGP FDSOI n-MOSFET; PGP FDSOI n-NCFET; Unity short-circuit current gain frequency; NEGATIVE-CAPACITANCE; MOSFET; SOI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a simulation study of analog/RE performance of PGP FDSOI n-NCFET with a thin (similar to 10 nm) layer of Si doped HfO2 as ferroelectric in the gate stack. A comparison is drawn with the analog/RE performance of the corresponding baseline PGP EDSOI n-MOSFET. The study has been performed at both device level and circuit level. The devices have a metal gate length of 20 nm and the supply voltage is 0.7 V. The f(T) value of FDSOI n-NCFET is seen to be marginally higher than that of the baseline FDSOI n-MOSFET. The frequency response of three basic amplifier topologies, viz., common-source, common gate and source follower using FDSOI n-NCFET have also been discussed in this paper.

引用

页数：3

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