Analog/RF Performance of Thin (∼10 nm) HfO2 Ferroelectric FDSOI NCFET at 20 nm Gate Length

We present a simulation study of analog/RE performance of PGP FDSOI n-NCFET with a thin (similar to 10 nm) layer of Si doped HfO2 as ferroelectric in the gate stack. A comparison is drawn with the analog/RE performance of the corresponding baseline PGP EDSOI n-MOSFET. The study has been performed at both device level and circuit level. The devices have a metal gate length of 20 nm and the supply voltage is 0.7 V. The f(T) value of FDSOI n-NCFET is seen to be marginally higher than that of the baseline FDSOI n-MOSFET. The frequency response of three basic amplifier topologies, viz., common-source, common gate and source follower using FDSOI n-NCFET have also been discussed in this paper.