AlGaN/GaN HEMTs on (001) silicon substrates

被引：10
|
作者：
Joblot, S
Cordier, Y
Semond, F
Lorenzini, P
Chenot, S
Massies, J
机构：
[1] CNRS, CRHEA, F-06560 Valbonne, France
[2] STMicroelect, F-38926 Crolles, France
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 02期
关键词：
D O I：
10.1049/el:20063688
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN high electron mobility transistors have been realised on resistive Si(001) substrate. The heterostructure was grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 7.1 x 10(12) cm(-2) and a Hall mobility of 1500 cm(2)/V s at room temperature. High electron mobility transistors with a gate length of 3 mu m have been processed and DC characteristics have been achieved. A maximum drain current of more than 440 mA/mm and a transconductance g(m) of 120 mS/mm have been obtained. These encouraging results open the way for GaN-based electronic applications on Si(001) substrates.
引用
收藏
页码：117 / 118
页数：2
相关论文
共 50 条
  • [21] AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate
    Comyn, Remi
    Chenot, Sebastien
    El Alouani, Wissam
    Nemoz, Maud
    Frayssinet, Eric
    Damilano, Benjamin
    Cordier, Yvon
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (09):
  • [22] Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates
    Wosko, Mateusz
    Paszkiewicz, Bogdan
    Szymanski, Tomasz
    Paszkiewicz, Regina
    JOURNAL OF CRYSTAL GROWTH, 2015, 414 : 248 - 253
  • [23] Comparative Study of AlGaN/GaN HEMTs on Free-Standing Diamond and Silicon Substrates for Thermal Effects
    Trejo, Manuel
    Chabak, Kelson D.
    Poling, Brain
    Gilbert, Ryan
    Crespo, Antonio
    Gillespie, James K.
    Kossler, Mauricio
    Walker, Dennis E.
    Via, Glen D.
    Jessen, Gregg H.
    Francis, Daniel
    Faili, Firooz
    Babic, Dubravko
    Ejeckam, Felix
    2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2010,
  • [24] AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates
    Bahat-Treidel, Eldad
    Hilt, Oliver
    Brunner, Frank
    Wuerfl, Joachim
    Traenkle, Guenther
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2408 - 2411
  • [25] ANALYSIS OF SILICON CARBIDE POLYMORPHS SUBSTRATES EFFECT ON PERFORMANCES OF ALGAN/GAN DOUBLE QUANTUM WELL HEMTS
    Sabaghi, M.
    HOLOS, 2019, 35 (02)
  • [26] Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
    Jia, Shuo
    Cai, Yong
    Wang, Deliang
    Zhang, Baoshun
    Lau, Kei May
    Chen, Kevin J.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2368 - 2372
  • [27] AlGaN-GaN HEMTs on patterned silicon (111) substrate
    Jia, S
    Dikme, Y
    Wang, DL
    Chen, KJ
    Lau, KM
    Heuken, M
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) : 130 - 132
  • [28] Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon
    Kuzmík, J
    Bychikhin, S
    Neuburger, M
    Dadgar, A
    Krost, A
    Kohn, E
    Pogany, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (08) : 1698 - 1705
  • [29] AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz
    Gerbedoen, Jean-Claude
    Soltani, Ali
    Joblot, Sylvain
    De Jaeger, Jean-Claude
    Gaquiere, Christophe
    Cordier, Yvon
    Semond, Fabrice
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (07) : 1497 - 1503
  • [30] Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
    Jia, Shuo
    Cai, Yong
    Wang, Deliang
    Zhang, Baoshun
    Lau, Kei May
    Chen, Kevin J.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (06) : 1474 - 1477
12345