AlGaN/GaN HEMTs on (001) silicon substrates

被引：10
|
作者：
Joblot, S
Cordier, Y
Semond, F
Lorenzini, P
Chenot, S
Massies, J
机构：
[1] CNRS, CRHEA, F-06560 Valbonne, France
[2] STMicroelect, F-38926 Crolles, France
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 02期
关键词：
D O I：
10.1049/el:20063688
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN high electron mobility transistors have been realised on resistive Si(001) substrate. The heterostructure was grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 7.1 x 10(12) cm(-2) and a Hall mobility of 1500 cm(2)/V s at room temperature. High electron mobility transistors with a gate length of 3 mu m have been processed and DC characteristics have been achieved. A maximum drain current of more than 440 mA/mm and a transconductance g(m) of 120 mS/mm have been obtained. These encouraging results open the way for GaN-based electronic applications on Si(001) substrates.
引用
收藏
页码：117 / 118
页数：2
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