p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes

被引：28

作者：

Liu, Zhiqiang ^{[1
]}

Ma, Jun ^{[1
]}

Yi, Xiaoyan ^{[1
]}

Guo, Enqing ^{[1
]}

Wang, Liancheng ^{[1
]}

Wang, Junxi ^{[1
]}

Lu, Na ^{[2
]}

Li, Jinmin ^{[1
]}

Ferguson, Ian ^{[3
]}

Melton, Andrew ^{[3
]}

机构：

[1] Chinese Acad Sci, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China

[2] Univ N Carolina, Dept Engn Technol, Charlotte, NC 28223 USA

[3] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 26期

关键词：

EFFICIENCY;

D O I：

10.1063/1.4773187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the advantages of the p-InGaN/AlGaN electron blocking layer (EBL) for InGaN/GaN light-emitting diodes (LEDs) were studied numerically and experimentally. The LEDs with p-InGaN/AlGaN EBL exhibited better optical performance over a wide range of carrier concentration due to the enhancement of holes' injection and electrons' confinement. The values of A, B, C, and D coefficients had been iteratively obtained by fitting quantum efficiency in the modified rate equation model. The analysis indicated that the improvement in the device properties could be attributed to the relatively small band gap and p-type doping of InGaN insertion layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773187]

引用

页数：4

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