p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes

被引：28

作者：

Liu, Zhiqiang ^{[1
]}

Ma, Jun ^{[1
]}

Yi, Xiaoyan ^{[1
]}

Guo, Enqing ^{[1
]}

Wang, Liancheng ^{[1
]}

Wang, Junxi ^{[1
]}

Lu, Na ^{[2
]}

Li, Jinmin ^{[1
]}

Ferguson, Ian ^{[3
]}

Melton, Andrew ^{[3
]}

机构：

[1] Chinese Acad Sci, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China

[2] Univ N Carolina, Dept Engn Technol, Charlotte, NC 28223 USA

[3] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 26期

关键词：

EFFICIENCY;

D O I：

10.1063/1.4773187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the advantages of the p-InGaN/AlGaN electron blocking layer (EBL) for InGaN/GaN light-emitting diodes (LEDs) were studied numerically and experimentally. The LEDs with p-InGaN/AlGaN EBL exhibited better optical performance over a wide range of carrier concentration due to the enhancement of holes' injection and electrons' confinement. The values of A, B, C, and D coefficients had been iteratively obtained by fitting quantum efficiency in the modified rate equation model. The analysis indicated that the improvement in the device properties could be attributed to the relatively small band gap and p-type doping of InGaN insertion layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773187]

引用

页数：4

共 50 条

[11] Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN-AlGaN-GaN Last Barrier and Without an AlGaN Electron Blocking Layer
Cheng, Liwen
Wu, Shudong
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2014, 50 (04) : 261 - 266
[12] Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer
Lu, Taiping
Li, Shuti
Liu, Chao
Zhang, Kang
Xu, Yiqin
Tong, Jinhui
Wu, Lejuan
Wang, Hailong
Yang, Xiaodong
Yin, Yian
Xiao, Guowei
Zhou, Yugang
APPLIED PHYSICS LETTERS, 2012, 100 (14)
[13] InGaN-Based Light-Emitting Diodes With an AlGaN Staircase Electron Blocking Layer
Chang, Shoou-Jinn
Yu, Sheng-Fu
Lin, Ray-Ming
Li, Shuguang
Chiang, Tsung-Hsun
Chang, Sheng-Po
Chen, Chang-Ho
IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (19) : 1737 - 1740
[14] Effect of electron blocking layer on efficiency droop in blue InGaN/GaN based light-emitting diodes
Singh, S.
Robidas, D.
Rohila, N.
Pal, S.
Dhanavantri, C.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (08): : 1106 - 1110
[15] Enhanced output power of InGaN/GaN light-emitting diodes with a multilayered structure of AlGaN/GaN electron blocking layer
Li, You
Wang, Jun
Hu, Yang
Zhang, Guo
Chen, Wenqiang
OPTOELECTRONIC DEVICES AND INTEGRATION IX, 2020, 11547
[16] Improvement of Efficiency Droop in Blue InGaN Light-Emitting Diodes With p-InGaN/GaN Superlattice Last Quantum Barrier
Chen, Jun
Fan, Guang-Han
Pang, Wei
Zheng, Shu-Wen
Zhang, Yun-Yan
IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (24) : 2218 - 2220
[17] Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
Lin, Bing-Cheng
Chen, Kuo-Ju
Wang, Chao-Hsun
Chiu, Ching-Hsueh
Lan, Yu-Pin
Lin, Chien-Chung
Lee, Po-Tsung
Shih, Min-Hsiung
Kuo, Yen-Kuang
Kuo, Hao-Chung
OPTICS EXPRESS, 2014, 22 (01): : 463 - 469
[18] Improvement of electrostatic discharge characteristics of InGaN/GaN MQWs light-emitting diodes by inserting an n+-InGaN electron injection layer and a p-InGaN/GaN hole injection layer
Jia, Chuanyu
Zhong, Cantao
Yu, Tongjun
Wang, Zhe
Tong, Yuzhen
Zhang, Guoyi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (06)
[19] Aging of InGaN/AlGaN/GaN light-emitting diodes
Yunovich, AE
Kovalev, AN
Kudryashov, VE
Manyakhin, FI
Turkin, AN
NITRIDE SEMICONDUCTORS, 1998, 482 : 1041 - 1046
[20] Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
Kuo, Yen-Kuang
Wang, Tsun-Hsin
Chang, Jih-Yuan
APPLIED PHYSICS LETTERS, 2012, 100 (03)

← 1 2 3 4 5 →