Scatterometry evaluation of focus-dose effects of EUV structures

被引：1

作者：

Dasari, Prasad ^{[1
]}

Kritsun, Oleg ^{[2
]}

Li, Jie ^{[1
]}

Volkman, Catherine ^{[2
]}

Hu, Jiangtao ^{[1
]}

Liu, Zhuan ^{[1
]}

机构：

[1] Nanometrics Inc, 1550 Buckeye Dr, Milpitas, CA 95035 USA

[2] GLOBALFOUNDRIES, Sunnyvale, CA 94085 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVII | 2013年 / 8681卷

关键词：

Extreme Ultraviolet Lithography (EUVL); Focus Exposure Matrix (FEM); Double Patterning (DP); Critical Dimension Uniformity (CDU); Spectroscopic ellipsometry (SE); NISR; Rigorous Coupled Wave Analysis (RCWA); Critical Dimension Scanning Electron Microscopy (CD-SEM);

D O I：

10.1117/12.2012120

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

CD and shape control of extreme ultraviolet lithography (EUVL) structures is critical to ensure patterning performance at the 10 nm technology node and beyond. The optimum focus/dose control by EUV scanner is critical for CD uniformity, and the scanner depends on reliable and rapid metrology feedback to maintain control. The latest advances in scatterometry such as ellipsometry (SE), reflectometry (NISR), and Mueller matrix (MM) offers complete pattern profile, critical dimensions (CD), side-wall angles, and dimensional characterization. In this study, we will present the evaluation results of CD uniformity and focus dose sensitivity of line and space EUV structures at the limit of current ASML NXE 3100 scanner printability and complex 3D EUV structures. The results will include static and dynamic precision and CD-SEM correlation data.

引用

页数：15

共 50 条

[1] Evaluation of measurement uncertainties in EUV scatterometry
Gross, H.
Scholze, F.
Rathsfeld, A.
Baer, M.
MODELING ASPECTS IN OPTICAL METROLOGY II, 2009, 7390
[2] Alternative methods for uncertainty evaluation in EUV scatterometry
Heidenreich, Sebastian
Henn, Mark-Alexander
Gross, Hermann
Bodermann, Bernd
Baer, Markus
MODELING ASPECTS IN OPTICAL METROLOGY IV, 2013, 8789
[3] In-line focus-dose monitoring for hyper NA imaging
Loi, Sara
Zeballos, Alejandro Fasciszewski
Iessi, Umberto
Robinson, John
Izikson, Pavel
Mani, Antonio
Polli, Marco
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXII, PTS 1 AND 2, 2008, 6922 (1-2):
[4] Evaluation of EUV scatterometry for CD characterization of EUV masks using rigorous FEM-Simulation
Scholze, Frank
Laubisa, Christian
Ulm, Gerhard
Dersch, Uwe
Pomplun, Jan
Burger, Sven
Schmidt, Frank
EMERGING LITHOGRAPHIC TECHNOLOGIES XII, PTS 1 AND 2, 2008, 6921
[5] EUV Scatterometry - Low-Dose Characterization of Polymer-based Metamaterials
Jenkins, Nicholas W.
Esashi, Yuka
Shao, Yunzhe
Tanksalvala, Michael
Kapteyn, Henry C.
Murnane, Margaret M.
Atkinson, Matthew
METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVIII, 2024, 12955
[6] Evaluation at the intermediate focus for EUV Light Source
Suganuma, Takashi
Soumagne, Georg
Moriya, Masato
Abe, Tamotsu
Sumitani, Akira
Endo, Akira
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES, 2009, 7271
[7] Scatterometry measurements of line end shortening structures for focus-exposure monitoring
Hung, Kelvin
Cheng, Yung Feng
Sun, Jie Wei
Lin, Benjamin Szu-Min
Fu, Steven
Dziura, Thaddeus G.
Cusacovich, Marcelo
Mieher, Walter D.
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XX, PTS 1 AND 2, 2006, 6152
[8] Improved geometry reconstruction and uncertainty evaluation for extreme ultraviolet (EUV) scatterometry based on maximum likelihood estimation
Henn, M-A.
Gross, H.
Scholze, F.
Elster, C.
Baer, M.
MODELING ASPECTS IN OPTICAL METROLOGY III, 2011, 8083
[9] Optical scatterometry evaluation of groove depth in lamellar silicon grating structures
Hava, S
Auslender, M
OPTICAL ENGINEERING, 2001, 40 (07) : 1244 - 1248
[10] Scatterometry-based dose and focus decorrelation. Applications to 28nm contact holes patterning intrafield focus investigations
Orlando, B.
Spaziani, N.
Socquet, N.
Bouyssou, R.
Gatefait, M.
Goirand, P. J.
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVII, 2013, 8681

← 1 2 3 4 5 →