Impact of hydrogen on electrical levels and luminescence of dislocation network at the interface of hydrophilically bonded silicon wafers

被引：4

作者：

Loshachenko, Anton ^{[1
]}

Bondarenko, Anton ^{[1
]}

Vyvenko, Oleg ^{[1
]}

Kononchuk, Oleg ^{[2
]}

机构：

[1] St Petersburg State Univ, VA Fok Inst Phys, St Petersburg 198504, Russia

[2] SOITEC, Parc Technol Fontaines, Bernin, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 1 | 2013年 / 10卷 / 01期

关键词：

dislocation network; hydrogen passivation; silicon direct wafer bonding; wet-chemical etching;

D O I：

10.1002/pssc.201200414

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The hydrogen penetration and its impact on electro-physical properties of dislocation network (DN) at the interface of directly bonded silicon wafers located close to the surface of semiconductor are investigated. The evolution of spectra of deep level transient spectroscopy (DLTS) after low temperature reverse bias annealing (RBA) procedure was monitored. It is established that DN resists the penetration of hydrogen ions into the bulk of silicon wafer. The dependence of amount of penetrated hydrogen on of dislocation density in DN is obtained and the model of its explanation is suggested. It is demonstrated that the hydrogenation did not reduce the concentration of shallow dislocation-related levels and that the amount of hydrogen introduced by wet chemical etching is sufficient to eliminate detrimental action of deep levels. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：36 / 39

页数：4

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