Infrared spectroscopic characterization of the buried interface and surfaces of bonded silicon wafers

被引：0
|
作者：
Friedrich, M [1 ]
Hiller, K [1 ]
Wiemer, M [1 ]
Gessner, T [1 ]
Zahn, DRT [1 ]
机构：
[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
来源：
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1998年 / 361卷 / 6-7期
关键词：
D O I：
10.1007/s002160050946
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Basic investigations have been carried out on the characterization of different processing steps in bond preparation using etched <111> faces of silicon wafers for the incidence of the infrared beam to a multiple internal reflection geometry. The method is very sensitive to the surface coverage and interface. Surface activation by RCA cleaning yields an increase of water coverage and a decrease of SIH and CH groups. The detection limit for an oxide layer between silicon wafers has been found to be about 3 nm.
引用
收藏
页码：558 / 559
页数：2
相关论文
共 50 条
  • [1] Infrared spectroscopic characterization of the buried interface and surfaces of bonded silicon wafers
    M. Friedrich
    K. Hiller
    M. Wiemer
    T. Geßner
    D. R. T. Zahn
    Fresenius' Journal of Analytical Chemistry, 1998, 361 : 558 - 559
  • [2] Infrared spectroscopic investigations of the buried interface in silicon bonded wafers
    Himcinschi, C
    Friedrich, M
    Hiller, K
    Gessner, T
    Zahn, DRT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (05) : 579 - 585
  • [3] Photoluminescence Characterization of Interface Quality of Bonded Silicon Wafers
    Yoo, Woo Sik
    Ishigaki, Toshikazu
    Kang, Kitaek
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (04) : P3064 - P3068
  • [4] Interface defects of bonded silicon wafers
    Reiche, M
    Tong, QY
    Gosele, U
    Heydenreich, J
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1847 - 1851
  • [5] Infrared spectroscopy of bonded silicon wafers
    Milekhin, A. G.
    Himcinschi, C.
    Friedrich, M.
    Hiller, K.
    Wiemer, M.
    Gessner, T.
    Schulze, S.
    Zahn, D. R. T.
    SEMICONDUCTORS, 2006, 40 (11) : 1304 - 1313
  • [6] Infrared spectroscopy of bonded silicon wafers
    A. G. Milekhin
    C. Himcinschi
    M. Friedrich
    K. Hiller
    M. Wiemer
    T. Gessner
    S. Schulze
    D. R. T. Zahn
    Semiconductors, 2006, 40 : 1304 - 1313
  • [7] Characterization of patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and microscopy
    Wu, Xing
    Uchikoshi, Junichi
    Hirokane, Takaaki
    Yamada, Ryuta
    Takeuchi, Akihiro
    Arima, Kenta
    Morita, Mizuho
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2511 - 2514
  • [8] Characterization of patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and microscopy
    Department of Precision Science and Technology, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    不详
    Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 2511 - 2514
  • [9] Dynamics of interface traps in bonded silicon wafers
    Khorasani, S
    Motieifar, A
    Rashidian, B
    APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 391 - 398
  • [10] Dynamics of interface traps in bonded silicon wafers
    Khorasani, S
    Motieifar, A
    Rashidian, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (05) : 421 - 426
12345