Interface defects of bonded silicon wafers

被引：0
|
作者：
Reiche, M [1 ]
Tong, QY [1 ]
Gosele, U [1 ]
Heydenreich, J [1 ]
机构：
[1] DUKE UNIV,SCH ENGN,WAFER BONDING LAB,DURHAM,NC 27708
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
bonded silicon wafers; interface defects; self-interstitials; electron microscopy;
D O I：
10.4028/www.scientific.net/MSF.196-201.1847
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure of interface defects of bonded silicon/silicon wafer pairs was investigated by high-resolution electron microscopy. Defects in the interface of bonded hydrophilic wafers appear after annealing at 1100 degrees C. They are identified as microtwins. Furthermore, bonded hydrophobic wafer pairs are characterized after analogous annealing by a disturbed interface region containing a large number of defects. In cross-sectional samples the defects are visible solely in atomic dimensions, having a typical V-shape parallel to {111} - lattice planes. Simulations of their HREM images revealed that they probably represent stacking-fault like defects caused by the incorporation of self-interstitials.
引用
收藏
页码：1847 / 1851
页数：5
相关论文
共 50 条
  • [1] Photoluminescence study of interface defects in bonded silicon wafers
    Nevin, WA
    Gay, DL
    Blackstone, S
    Higgs, V
    SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS V, PROCEEDINGS, 2001, 99 (35): : 187 - 194
  • [2] Charged defects at the interface between directly bonded silicon wafers
    Laporte, A
    Sarrabayrouse, G
    Benamara, M
    Claverie, A
    Rocher, A
    PeyreLavigne, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A): : 5502 - 5506
  • [3] Dynamics of interface traps in bonded silicon wafers
    Khorasani, S
    Motieifar, A
    Rashidian, B
    APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 391 - 398
  • [4] Dynamics of interface traps in bonded silicon wafers
    Khorasani, S
    Motieifar, A
    Rashidian, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (05) : 421 - 426
  • [5] Photoluminescence Characterization of Interface Quality of Bonded Silicon Wafers
    Yoo, Woo Sik
    Ishigaki, Toshikazu
    Kang, Kitaek
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (04) : P3064 - P3068
  • [6] Structures and electronic properties of defects on the borders of silicon bonded wafers
    Tereshchenko A.N.
    Steinman E.A.
    Mazilkin A.A.
    Khorosheva M.A.
    Kononchuk O.
    Russian Microelectronics, 2015, 44 (8) : 585 - 589
  • [7] Reduction of defects in thin bonded silicon on insulator (SOI) wafers
    Aga, H
    Mitani, K
    Kobayashi, N
    SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS IV, 1998, 36 : 552 - 558
  • [8] STUDIES ON MICROVOIDS AT THE INTERFACE OF DIRECT BONDED SILICON-WAFERS
    YUN, SJ
    AHN, KY
    YI, KS
    KANG, SW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (08) : 2326 - 2330
  • [9] Infrared spectroscopic investigations of the buried interface in silicon bonded wafers
    Himcinschi, C
    Friedrich, M
    Hiller, K
    Gessner, T
    Zahn, DRT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (05) : 579 - 585
  • [10] Defect compensation at the interface between directly bonded silicon wafers
    Laporte, A
    Lescouzères, L
    PeyreLavigne, A
    Sarrabayrouse, G
    MATERIALS SCIENCE AND TECHNOLOGY, 1998, 14 (12) : 1299 - 1302
12345