Interface defects of bonded silicon wafers

被引：0
|
作者：
Reiche, M [1 ]
Tong, QY [1 ]
Gosele, U [1 ]
Heydenreich, J [1 ]
机构：
[1] DUKE UNIV,SCH ENGN,WAFER BONDING LAB,DURHAM,NC 27708
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
bonded silicon wafers; interface defects; self-interstitials; electron microscopy;
D O I：
10.4028/www.scientific.net/MSF.196-201.1847
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure of interface defects of bonded silicon/silicon wafer pairs was investigated by high-resolution electron microscopy. Defects in the interface of bonded hydrophilic wafers appear after annealing at 1100 degrees C. They are identified as microtwins. Furthermore, bonded hydrophobic wafer pairs are characterized after analogous annealing by a disturbed interface region containing a large number of defects. In cross-sectional samples the defects are visible solely in atomic dimensions, having a typical V-shape parallel to {111} - lattice planes. Simulations of their HREM images revealed that they probably represent stacking-fault like defects caused by the incorporation of self-interstitials.
引用
收藏
页码：1847 / 1851
页数：5
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