InAs/GaAs Quantum Dot Lasers Metal-Stripe-Bonded onto SOI Substrate

被引：0
|
作者：
Jhang, Yuan-Hsuan [1 ]
Tanabe, Katsuaki [2 ]
Iwamoto, Satoshi [1 ,2 ]
Arakawa, Yasuhiko [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
来源：
2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrate with silicon rib structures by metal-stripe wafer bonding technology. The threshold current density of the bonded laser is 880 A/cm(2), and the spectrum shows the lasing wavelength around 1.3 mu m at room temperature.
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页码：18 / 18
页数：1
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