InAs/GaAs Quantum Dot Lasers Metal-Stripe-Bonded onto SOI Substrate

被引：0

作者：

Jhang, Yuan-Hsuan ^{[1
]}

Tanabe, Katsuaki ^{[2
]}

Iwamoto, Satoshi ^{[1
,2
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

来源：

2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrate with silicon rib structures by metal-stripe wafer bonding technology. The threshold current density of the bonded laser is 880 A/cm(2), and the spectrum shows the lasing wavelength around 1.3 mu m at room temperature.

引用

页码：18 / 18

页数：1

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