Formation of NiSiGe on Compressivly Strained SiGe Thin Layers

被引：0
|
作者：
Du, Xiong-Xiong [1 ]
Sun, Lei [1 ]
Wang, Yi [1 ]
Knoll, Lars
Mussler, Gregor
Hollaeder, Bernd
Mantl, Siegfried
Zhao, QingTai
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
基金：
中国国家自然科学基金;
关键词：
NICKEL; STABILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we studied the nickel germano-silicide formation on thin SiGe layers epitaxially-grown on silicon substrate. Single crystal NiSiGe film with a thickness of 5.5nm was formed at 400 degrees C and showed a low specific resistance of 30u Omega cm. A thicker NiSiGe layer resulted from a thicker Ni showed poly-crystalline structure with rough surface and interface. We also found Ge and Ni diffuse simultaneously to the silicon substrate during germane-silicidation, causing degradation of the NiSiGe layers.
引用
收藏
页码：1082 / 1084
页数：3
相关论文
共 50 条
  • [1] Impact of an ultra-thin Ti interlayer on the formation of NiSiGe/SiGe
    Zhang, Bo
    Hou, Chunlei
    Ping, Yunxia
    Yu, Wenjie
    Xue, Zhongying
    Wei, Xing
    Di, Zengfeng
    Zhang, Miao
    Wang, Xi
    Zhao, Qingtai
    MICROELECTRONIC ENGINEERING, 2015, 137 : 92 - 95
  • [2] Thin relaxed SiGe layers for strained SiCMOS
    Chen, PS
    Lee, SW
    Lee, MH
    Liu, CW
    Tsai, MJ
    2004 SEMICONDUCTOR MANUFACTURING TECHNOLOGY WORKSHOP PROCEEDINGS, 2004, : 79 - 82
  • [3] Mechanism of crack formation in strained SiGe(111) layers
    Wagatsuma, Youya
    Alam, Md. Mahfuz
    Okada, Kazuya
    Kanesawa, Rena
    Yamada, Michihiro
    Hamaya, Kohei
    Sawano, Kentarou
    JOURNAL OF CRYSTAL GROWTH, 2022, 589
  • [4] Interface properties of thin oxide layers grown on strained SiGe layers at low temperatures
    Mukhopadhyay, M
    Ray, SK
    Ghosh, TB
    Sreemany, M
    Maiti, CK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (03) : 360 - 365
  • [5] Interface properties of thin oxide layers grown on strained SiGe layers at low temperatures
    Indian Inst of Technology, Kharagpur, India
    Semicond Sci Technol, 3 (360-365):
  • [6] Formation of ternary Ni-silicide on relaxed and strained SiGe layers
    Zhao, QT
    Buca, D
    Lenk, S
    Loo, R
    Caymax, M
    Mantl, S
    MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) : 285 - 289
  • [7] Diffusion in relaxed and strained SiGe layers
    Larsen, AN
    Kringhoj, P
    PHYSICA SCRIPTA, 1997, T69 : 92 - 97
  • [8] Diffusion in relaxed and strained SiGe layers
    Phys Scr T, (92-97):
  • [9] Challenges in the oxidation of strained SiGe layers
    Craciun, V
    Zhang, JY
    Boyd, IW
    FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, 1998, 47 : 461 - 475
  • [10] RAMAN-STUDY OF STRAINED SIGE LAYERS
    GU, SL
    ZHANG, R
    HAN, P
    WANG, RH
    ZHONG, PX
    ZHENG, YD
    APPLIED SURFACE SCIENCE, 1994, 81 (04) : 431 - 434
12345