Formation of NiSiGe on Compressivly Strained SiGe Thin Layers

被引：0
|
作者：
Du, Xiong-Xiong [1 ]
Sun, Lei [1 ]
Wang, Yi [1 ]
Knoll, Lars
Mussler, Gregor
Hollaeder, Bernd
Mantl, Siegfried
Zhao, QingTai
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
基金：
中国国家自然科学基金;
关键词：
NICKEL; STABILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we studied the nickel germano-silicide formation on thin SiGe layers epitaxially-grown on silicon substrate. Single crystal NiSiGe film with a thickness of 5.5nm was formed at 400 degrees C and showed a low specific resistance of 30u Omega cm. A thicker NiSiGe layer resulted from a thicker Ni showed poly-crystalline structure with rough surface and interface. We also found Ge and Ni diffuse simultaneously to the silicon substrate during germane-silicidation, causing degradation of the NiSiGe layers.
引用
收藏
页码：1082 / 1084
页数：3
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