Formation of ternary Ni-silicide on relaxed and strained SiGe layers

被引：17
|
作者：
Zhao, QT
Buca, D
Lenk, S
Loo, R
Caymax, M
Mantl, S
机构：
[1] Forschungszentrum Julich, InstSchichten & Grenzflachen, D-52425 Julich, Germany
[2] Forschungszentrum Julich, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany
[3] IMEC, B-3001 Louvain, Belgium
来源：
MICROELECTRONIC ENGINEERING | 2004年 / 76卷 / 1-4期
关键词：
germanosilicide; Si1-x; Ge-x; strain; strain-relaxation;
D O I：
10.1016/j.mee.2004.07.030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ni germanosilicide formation on Si1-xGex layers with different elastic strain was investigated by sheet resistance measurements and cross-sectional transmission electron microscopy. Ni-Si-Ge silicide layers with low resistivity were obtained by depositing 20 nm Ni with an 8 nm Ti cap on the Si-1-Ge-x(x) layers and rapid thermal annealing within the temperature range of 400-500degreesC. The sheet resistance and the thermal stability of the silicide layers depends on the elastic strain of the SiGe layer. Best uniformity of the silicide layers was obtained on relaxed SiGe layers. High strain produces rough silicide layers. Strain relaxation was observed in initially pseudomorphically strained Si0.73Ge0.27 layers during silicidation at 600 degreesC. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：285 / 289
页数：5
相关论文
共 50 条
  • [1] Diffusion in relaxed and strained SiGe layers
    Larsen, AN
    Kringhoj, P
    PHYSICA SCRIPTA, 1997, T69 : 92 - 97
  • [2] Diffusion in relaxed and strained SiGe layers
    Phys Scr T, (92-97):
  • [3] Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si(001), and strained Si/relaxed SiGe/Si(001) and effect of postthermal annealing
    Ko, J. H.
    Jang, C. H.
    Kim, S. H.
    Song, Y. -J.
    Lee, N. E.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04): : 1468 - 1473
  • [4] Ni silicide formation on polycrystalline SiGe and SiGeC layers
    Haralson, E
    Jarmar, T
    Seger, J
    Radamson, HH
    Zhang, SL
    Östling, M
    NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 2003, 745 : 111 - 116
  • [5] Thin relaxed SiGe layers for strained SiCMOS
    Chen, PS
    Lee, SW
    Lee, MH
    Liu, CW
    Tsai, MJ
    2004 SEMICONDUCTOR MANUFACTURING TECHNOLOGY WORKSHOP PROCEEDINGS, 2004, : 79 - 82
  • [6] STRAINED AND RELAXED SEMICONDUCTING SILICIDE LAYERS HETEROEPITAXIALLY GROWN ON SILICON
    CHEVRIER, J
    VINH, T
    DERRIEN, J
    SCANNING MICROSCOPY, 1993, 7 (02) : 473 - 480
  • [7] Low temperature spike anneal for Ni-silicide formation
    Lauwers, A
    Kittl, JA
    Van Dal, M
    Chamirian, O
    Lindsay, R
    de Potter, M
    Demeurisse, C
    Vrancken, C
    Maex, K
    Pagès, X
    Van der Jeugd, K
    Kuznetsov, V
    Granneman, E
    MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) : 303 - 310
  • [8] Formation of Ni-Silicide at the Interface of Ni/4H-SiC
    Jung, Younghun
    Kim, Jihyun
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) : H551 - H553
  • [9] Formation process and microstructural evolution of Ni-silicide layers grown by chemical vapor deposition of Si on Ni substrates
    Yoon, JK
    Byun, JY
    Kim, GH
    Lee, JK
    Yoon, HS
    Hong, KT
    SURFACE & COATINGS TECHNOLOGY, 2003, 168 (2-3): : 241 - 248
  • [10] Compressively strained Ge channels on relaxed SiGe buffer layers
    Bollani, M
    Müller, E
    Signoretti, S
    Beeli, C
    Isella, G
    Kummer, M
    von Känel, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3): : 102 - 105
12345