Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

被引：8

作者：

Mori, M ^{[1
]}

Fujimoto, N ^{[1
]}

Akae, N ^{[1
]}

Uotani, K ^{[1
]}

Tambo, T ^{[1
]}

Tatsuyama, C ^{[1
]}

机构：

[1] Toyama Univ, Fac Engn, Dept Elect & Elect Engn, Toyama 9308555, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 286卷 / 02期

关键词：

atomic force microscopy; X-ray diffraction; molecular beam epitaxy; semiconducting materials;

D O I：

10.1016/j.jcrysgro.2005.10.011

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 degrees C. The two-step growth procedure was also used to further improve the crystal quality of the films. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：218 / 222

页数：5

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