Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection

被引：3

作者：

Fang, Cizhe ^{[1
]}

Liu, Yan ^{[1
]}

Wang, Yibo ^{[1
]}

Wu, Jibao ^{[1
]}

Han, Genquan ^{[1
]}

Shao, Yao ^{[2
]}

Zhang, Jincheng ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Wide Bandgap Semicond Technol Disciplines State K, Sch Microelect, Xian 710071, Shaanxi, Peoples R China

[2] China Elect Power Res Inst, Beijing 100192, Peoples R China

来源：

IEEE PHOTONICS JOURNAL | 2018年 / 10卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Buffer-free GeSn; high relaxation degree; photodetection; SN X ALLOYS; GERMANIUM-TIN; HIGH-EFFICIENCY; SI; SILICON; FILMS; PASSIVATION; PHOTODIODE; LASERS; LAYERS;

D O I：

10.1109/JPHOT.2018.2873734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, buffer-free germanium-tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal-oxide-semiconductor processing conditions. The experimental results demonstrate that Ge0.928Sn0.072 film retains high crystallinity with few misfit dislocations formed at a relaxation degree of 91.5% after post-thermal annealing at 600 degrees C. Moreover, numerical simulations demonstrate that the proposed photodetector can achieve a high responsivity of 0.102 NW at 2 mu m. This strategy can facilitate the fabrication of GeSn-based devices, which will contribute substantially to the development of group IV-based infrared optoelectronics.

引用

页数：9

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