Activation of surface hydroxyl groups for molecular reactions by modification of H-terminated Si(111) surfaces

被引：0
|
作者：
Chabal, Yves J. [1 ]
Thissen, Peter [1 ]
Peixoto, Tatiana [1 ]
Seitz, Oliver [1 ]
Vega, Abraham [1 ]
Longo, Roberto C. [1 ]
Cho, Kyeongjae [1 ]
机构：
[1] Univ Texas Dallas, Richardson, TX 75080 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 244卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
128-COLL
引用
收藏
页数：1
相关论文
共 50 条
  • [41] Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si
    Gokce, Bilal
    Adles, Eric J.
    Aspnes, David E.
    Gundogdu, Kenan
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [42] Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si
    Gokce, Bilal
    Adles, Eric J.
    Aspnes, David E.
    Gundogdu, Kenan
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2010, 107 (41) : 17503 - 17508
  • [43] van der Waals Effects in Interfacial Water on the Cl- and H-Terminated Si(111) Surfaces
    Silvestrelli, Pier Luigi
    Toigo, Flavio
    Ancilotto, Francesco
    JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (39): : 17124 - 17131
  • [44] Chemical etching mechanism of H-terminated Si(111) surfaces in different pH solutions studied by HREELS
    He, Yan
    Thiry, P.A.
    Yu, Li-Ming
    Caudano, R.
    Surface Science, 1995, 331-333 (pt A): : 441 - 446
  • [45] Diffusion of Ag adatom on the H-terminated and clean Si(111) surfaces: A first-principles study
    Jeong, H
    Jeong, S
    PHYSICAL REVIEW B, 2005, 71 (03)
  • [46] THE CHEMICAL ETCHING MECHANISM OF H-TERMINATED SI(111) SURFACES IN DIFFERENT PH SOLUTIONS STUDIED BY HREELS
    HE, Y
    THIRY, PA
    YU, LM
    CAUDANO, R
    SURFACE SCIENCE, 1995, 331 : 441 - 446
  • [47] Electronic structure of the ideally H-terminated Si(111)-(1X1) surface
    Gallego, S
    Avila, J
    Martin, M
    Blase, X
    Taleb, A
    Dumas, P
    Asensio, MC
    PHYSICAL REVIEW B, 2000, 61 (19): : 12628 - 12631
  • [48] IMPERFECTIONS ON THE CHEMICALLY PREPARED, IDEALLY H-TERMINATED SI(111)-(1X1) SURFACES
    JAKOB, P
    CHABAL, YJ
    RAGHAVACHARI, K
    DUMAS, P
    CHRISTMAN, SB
    SURFACE SCIENCE, 1993, 285 (03) : 251 - 258
  • [49] Low friction of a diamond/H-terminated, Si(111) sliding system
    Masuda, H
    Honda, F
    IEEE TRANSACTIONS ON MAGNETICS, 2003, 39 (02) : 903 - 908
  • [50] Theoretical study on reactions of alkene molecules on H-terminated Si(111): Density functional theory and ab initio molecular dynamics
    Jiang, Haihui
    Yuan, Shiling
    Liu, Gang
    Wang, Qilong
    CHEMICAL PHYSICS LETTERS, 2007, 438 (1-3) : 53 - 58
12345