Activation of surface hydroxyl groups for molecular reactions by modification of H-terminated Si(111) surfaces

被引:0
|
作者
Chabal, Yves J. [1 ]
Thissen, Peter [1 ]
Peixoto, Tatiana [1 ]
Seitz, Oliver [1 ]
Vega, Abraham [1 ]
Longo, Roberto C. [1 ]
Cho, Kyeongjae [1 ]
机构
[1] Univ Texas Dallas, Richardson, TX 75080 USA
来源
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 244卷
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
128-COLL
引用
收藏
页数:1
相关论文
共 50 条
  • [31] Reactions of Si-H to Si-X (X = halogen) bonds at H-terminated Si(111) surfaces in hydrogen halide solutions in the presence of oxidants
    Zhou, XW
    Ishida, M
    Imanishi, A
    Nakato, Y
    ELECTROCHIMICA ACTA, 2000, 45 (28) : 4655 - 4662
  • [32] INVERSE-PHOTOEMISSION SPECTROSCOPY OF THE UNRECONSTRUCTED, IDEALLY H-TERMINATED SI(111) SURFACE
    BOUZIDI, S
    COLETTI, F
    DEBEVER, JM
    THIRY, PA
    DUMAS, P
    CHABAL, YJ
    PHYSICAL REVIEW B, 1992, 45 (03): : 1187 - 1192
  • [33] EXPERIMENTAL-DETERMINATION OF THE ATOMIC-STRUCTURE OF A H-TERMINATED SI(111) SURFACE
    JONA, F
    THOMPSON, WA
    MARCUS, PM
    PHYSICAL REVIEW B, 1995, 52 (11): : 8226 - 8230
  • [34] The growth of indium on the H-terminated Si(111) 1x1 surface
    Leisenberger, FP
    Ofner, H
    Ramsey, MG
    Netzer, FP
    SURFACE SCIENCE, 1997, 383 (01) : 25 - 36
  • [35] Modification of H-terminated Ge surface in hydrochloric acid
    Park, Kibyung
    Lee, Younghwan
    Lim, Sangwoo
    APPLIED SURFACE SCIENCE, 2008, 254 (06) : 1842 - 1846
  • [36] Diffusion mechanisms of a Si adatom on H-terminated Si(100) surfaces
    Jeong, S
    Oshiyama, A
    PHYSICAL REVIEW B, 1998, 58 (19): : 12958 - 12963
  • [37] Chemisorption of OH on the H-terminated Si(001) surface
    Goto, H
    Hirose, K
    Sakamoto, M
    Sugiyama, K
    Inagaki, K
    Tsuchiya, H
    Kobata, I
    Ono, T
    Mori, Y
    COMPUTATIONAL MATERIALS SCIENCE, 1999, 14 (1-4) : 77 - 79
  • [38] Molecular orbital analysis of reaction processes of fluorine with H-terminated silicon (111) and (100) surfaces
    Kanashima, T
    Okuyama, M
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 244 - 248
  • [39] Role of the Deposition Precursor Molecules in Defining Oxidation State of Deposited Copper in Surface Reduction Reactions on H-Terminated Si(111) Surface
    Duan, Yichen
    Gao, Fei
    Teplyakov, Andrew V.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (48): : 27018 - 27027
  • [40] Initial oxidation of Si(001) clean and H-terminated surfaces
    Udagawa, M
    Sumita, I
    Nakajima, M
    ELECTRON MICROSCOPY AND ANALYSIS 1995, 1995, 147 : 255 - 258