Design Topology: 90 nm Single Stage FGMOS Amplifier Design

In CMOS technology, Floating-gate Metal-Oxide-Semiconductor (FGMOS) is a new technique that has been introduced in low voltage design due to its low threshold voltage. The operational time of the FGMOS transistor can be improved by controlling the threshold voltage without reducing the feature size of the transistor. Therefore, this research focuses on analyzing and comparing the simulation application of FGMOS technique with conventional MOSFET. Consequently, this paper presents a design topology of single stage FGMOS amplifier design consists of current mirror and differential amplifier circuit using 90nm design technology. The FGMOS differential amplifier is designed based on differential input and single-ended output. A differential signal is defined as one that have equal and lead signal excursions around a fixed potential. This design is simulated and analyzed using Full Custom Synopsys software. The result demonstrates 30.8 dB of gain, 3dB-bandwith of 74.5 kHz, the phase margin of 107 degrees, unity gain bandwidth of 2.44 MHz, power dissipation of 195.4920 mu W and slew rate of 5.03 V/mu S.