Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

被引：9

作者：

Liu, Li-Jung ^{[1
]}

Chang-Liao, Kuei-Shu ^{[1
]}

Jian, Yi-Chuen ^{[1
]}

Cheng, Jen-Wei ^{[1
]}

Wang, Tien-Ko ^{[1
]}

Tsai, Ming-Jinn ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 09期

关键词：

Atomic layer deposition (ALD); charge-trapping Flash memory; high-kappa; SiGe buried channel;

D O I：

10.1109/LED.2012.2206069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The operation characteristics of p-channel TaN/Al2O3/HfO2/HfAlO2/SiO2/Si MAHOS-type nonvolatile memory devices with different Ge contents in a SiGe buried channel are investigated in this letter. Compared with those of a device having a conventional Si-channel, both programming and erasing speeds are significantly improved by employing a Si0.7Ge0.3 buried channel. Satisfactory retention and excellent endurance characteristics up to 10(6) P/E cycles with 4.1-V memory window show that the degradation on reliability properties, if it exists, is negligible when the SiGe buried channel is introduced.

引用

页码：1264 / 1266

页数：3

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