Investigation of the emission of photons induced in the volume reflection of 10-GeV positrons in a bent silicon single crystal

被引：16

作者：

Afonin, A. G. ^{[1
]}

Baranov, V. T. ^{[1
]}

Britvich, G. I. ^{[1
]}

Bugorskii, A. P. ^{[1
]}

Kotov, V. I. ^{[1
]}

Kushnirenko, A. E. ^{[1
]}

Maisheev, V. A. ^{[1
]}

Pikalov, V. A. ^{[1
]}

Chepegin, V. N. ^{[1
]}

Chesnokov, Yu. A. ^{[1
]}

Yazynin, I. A. ^{[1
]}

Ivanov, Yu. M. ^{[2
]}

Skorobogatov, V. V. ^{[2
]}

机构：

[1] Inst High Energy Phys, Protvino 142281, Moscow Region, Russia

[2] Russian Acad Sci, Petersburg Nucl Phys Inst, Gatchina 183300, Russia

来源：

JETP LETTERS | 2008年 / 88卷 / 07期

关键词：

D O I：

10.1134/S0021364008190028

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The emission of photons in the motion of a 10-GeV positron beam in bent silicon crystals has been experimentally investigated. The experimental data are compared with the theoretical calculations.

引用

页码：414 / 417

页数：4

共 28 条

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[24] BREMSSTRAHLUNG SPECTRA OF 1.2-GEV ELECTRONS IN A SILICON SINGLE-CRYSTAL AT AN ANGLE THETA= 1.7X10-2 RADIAN
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[27] ANISOTROPY IN THE ANGULAR-DISTRIBUTIONS OF FRAGMENTS FROM U-238 FISSION INDUCED BY PHOTONS GENERATED IN THE INTERACTION OF HIGH-ENERGY ELECTRONS WITH A SINGLE-CRYSTAL OF SILICON
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SOVIET JOURNAL OF NUCLEAR PHYSICS-USSR, 1981, 34 (04): : 483 - 484
[28] Thermally robust and valence-variation-induced white-light emission of a novel stannate phosphor Sr3Al10SnO20:Dy3+: crystal structure, luminescence property, and mechanism investigation
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